III-nitride materials, devices and nano-structures /

Feng, Zhe Chuan

III-nitride materials, devices and nano-structures / editor, Zhe Chuan Feng, Guangxi University, P.R. China. - London : Europe Ltd., World Scientific Publishing 2017 - xviii, 405 pages : illustrations ; 24 cm

Includes bibliographical references and index.

PART 1.General PART 2.Waste energy harvesting using 3-nitride materials PART 3.Nitride Materials


"Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more...

9781786343185 1786343185


Semiconductors
Nanostructured materials.
Nitrides.
Nanostructured materials.
Nitrides.
Semiconductors--Materials.--Materials.

621.38152 / FEN

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