TY  - BOOK
AU  - Ishibashi,Koichiro
AU  - Osada,Kenichi
TI  - Low Power and Reliable SRAM Memory Cell and Array Design: edited by Koichiro Ishibashi and Kenichi Osada
SN  - 9783642195679
AV  - TK7871.99.M44 
U1  - 621.39732 23
PY  - 2011///
CY  - New York : 
PB  - Springer
N1  - License restrictions may limit access; Scholarly & Professional; Springer
N2  - Annotation; The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability
UR  - http://www.columbia.edu/cgi-bin/cul/resolve?clio9391361
ER  -