000			01583nam a22002417a 4500
003			CUTN
005			20190218141717.0
008			190218b xxu||||| |||| 00| 0 eng d
020			_a9056997149
020			_a9789056997144
041			_aEnglish
082			_a621.381 _bWAD
100			_aWada, K . [Ed.]
245			_aDefects in optoelectronic materials _cK Wada; Stella W Pang
260			_aAmsterdam : _bGordon and Breach Science Pub., _c©2001.
300			_a412 pages : _billustrations ; _c23 cm.
440			_aOptoelectronic properties of semiconductors and superlattices, _vv. 11.
505			_t1. Saturation of Free Carrier Concentration in Semiconductors / W. Walukiewicz -- _t2. Point of Defect Formation Near Surfaces / K. Wada -- _t3. Optical Characterization of Plasma Etching Induced Damage / E.L. Hu and C.-H. Chen -- _t4. Dry Etch Damage in Widegap Semiconductor Materials / S.J. Pearton and R.J. Shul -- _t5. Generation, Removal, and Passivation of Plasma Process Induced Defects / S.W. Pang -- _t6. Defects Induced by Metal Semiconductor Contacts Formation / T. Okumura -- _t7. Electrical Characterization of Defects Introduced in Epitaxially Grown GaAs by Electron-, Proton- and He-Ion Irradiation / F.D. Auret -- _t8. Instability and Defect Reaction / Y. Shinozuka -- _t9. Defects and Device Degradation / K. Wada and H. Fushimi.
650			_aOptoelectronic devices -- Defects.
650			_aOptoelectronic devices.
650			_aOptoelectronics -- Materials.
942			_2ddc _cBOOKS
999			_c27016 _d27016