| 000 | 01662cam a22003732 b4500 | ||
|---|---|---|---|
| 001 | 10970 | ||
| 003 | CUTN | ||
| 005 | 20160328134048.0 | ||
| 006 | m d | ||
| 007 | cr n | ||
| 008 | 110204e20110818njua s|||||||| 2|eng|d | ||
| 020 | _a9783642195679 | ||
| 020 |
_a3642195679 (Trade Cloth) _cUSD 169.00 Retail Price (Publisher) |
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| 024 | 3 | _a9783642195679 | |
| 035 | _a(WaSeSS)ssj0000610184 | ||
| 037 |
_a3642195679 _b00024965 |
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| 040 |
_aBIP US _dWaSeSS _cCLC |
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| 050 | 4 | _aTK7871.99.M44 | |
| 082 | 0 | 0 |
_a621.39732 _223 |
| 210 | 1 | 0 | _aLow Power and Reliable SRAM Memory Cell and Array Design |
| 245 | 0 | 0 |
_aLow Power and Reliable SRAM Memory Cell and Array Design _h[electronic resource] _bedited by Koichiro Ishibashi and Kenichi Osada |
| 260 |
_aNew York : _bSpringer _cAug. 2011 |
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| 300 |
_axi, 143 p, _c23 cm. |
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| 440 | 0 | _aSpringer Series in Advanced Microelectronics Ser. | |
| 506 | _aLicense restrictions may limit access. | ||
| 520 | 8 |
_aAnnotation _bThe recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability. |
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| 521 |
_aScholarly & Professional _bSpringer |
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| 700 | 1 |
_aIshibashi,Koichiro _eEditor _4edt _zISH |
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| 700 | 1 |
_aOsada,Kenichi _eEditor _4edt |
|
| 773 | 0 | _tSpringerLink ebooks - Engineering (2011) | |
| 856 | 4 | 0 |
_uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio9391361 _zFull text available from SpringerLink ebooks - Engineering (2011) |
| 910 | _aBowker Global Books in Print record | ||
| 942 |
_2ddc _cBOOKS |
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| 999 |
_c3174 _d3174 |
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