| 000 | 02597cam a2200493 i 4500 | ||
|---|---|---|---|
| 003 | OCoLC | ||
| 005 | 20251022173422.0 | ||
| 008 | 141125s2015 flua ob 001 0 eng d | ||
| 020 | _a9781482232820 | ||
| 020 | _a1482232820 | ||
| 020 | _a9780429068393 | ||
| 020 | _a0429068395 | ||
| 020 | _a9781322637693 | ||
| 020 | _a1322637695 | ||
| 020 | _z9781482232813 | ||
| 020 | _z9781138034198 | ||
| 041 | _aEnglish | ||
| 049 | _aMAIN | ||
| 072 | 7 |
_aTEC _x009010 _2bisacsh |
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| 082 | 0 | 4 |
_a661.068 _223 _bERA |
| 100 | 1 | _aEranna, G., | |
| 100 | 1 | _eauthor. | |
| 245 | 1 | 0 |
_aCrystal growth and evaluation of silicon for VLSI and ULSI / _cGolla Eranna. |
| 260 |
_bCRC Press, _c2015. |
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| 300 |
_axvii, 411 pages : _billustrations. |
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| 500 | _a"A Chapman & Hall book." | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _a1. Introduction -- 2. Silicon : the key material for integrated circuit fabrication technology -- 3. Importance of single crystals for integrated circuit fabrication -- 4. Different techniques for growing single-crystal silicon -- 5. From silicon ingots to silicon wafers -- 6. Evaluation of silicon wafers -- 7. Resistivity and impurity concentration mapping of silicon wafers -- 8. Impurities in silicon wafers -- 9. Defects in silicon wafers -- 10. Silicon wafer preparation for VLSI and ULSI processing -- 11. Packing of silicon wafers. | |
| 506 | _aAccess restricted to subscribing institutions. | ||
| 520 | _aSilicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. | ||
| 650 | 0 | _aSilicon crystals. | |
| 650 | 0 | _aSilicon crystals | |
| 650 | 0 | _aCrystal growth. | |
| 650 | 0 | _aIntegrated circuits | |
| 650 | 0 | _aIntegrated circuits | |
| 650 | 0 | _xElectric properties. | |
| 650 | 0 | _xVery large scale integration. | |
| 650 | 0 | _xUltra large scale integration. | |
| 776 | 0 | 8 |
_iPrint version: _aEranna, G. _tCrystal growth and evaluation of silicon for VLSI and ULSI. _dBoca Raton, FL : CRC Press : Taylor & Francis Group, 2015 _z9781482232813 _w(OCoLC)902838097. |
| 856 | 4 | 0 | _uhttps://go.oreilly.com/university-of-glasgow/library/view/-/9781482232813/?ar |
| 856 | 4 | 0 | _zConnect to resource |
| 907 | _a.b44461689 | ||
| 942 |
_2ddc _cBOOKS |
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| 999 |
_c46027 _d46027 |
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