Low Power and Reliable SRAM Memory Cell and Array Design
Low Power and Reliable SRAM Memory Cell and Array Design edited by Koichiro Ishibashi and Kenichi Osada [electronic resource]
- New York : Springer Aug. 2011
- xi, 143 p, 23 cm.
- Springer Series in Advanced Microelectronics Ser. .
License restrictions may limit access.
Annotation The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Scholarly & Professional Springer
9783642195679 3642195679 (Trade Cloth) USD 169.00 Retail Price (Publisher) = Low Power and Reliable SRAM Memory Cell and Array Design
9783642195679
3642195679 00024965
TK7871.99.M44
621.39732
License restrictions may limit access.
Annotation The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Scholarly & Professional Springer
9783642195679 3642195679 (Trade Cloth) USD 169.00 Retail Price (Publisher) = Low Power and Reliable SRAM Memory Cell and Array Design
9783642195679
3642195679 00024965
TK7871.99.M44
621.39732