MARC details
| 000 -LEADER |
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| fixed length control field |
01726cam a22003977i 4500 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
CUTN |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20190817164344.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
170628t20172017njua b 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9781786343185 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
1786343185 |
| 041 ## - LANGUAGE CODE |
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| Language |
English |
| 042 ## - AUTHENTICATION CODE |
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| Authentication code |
lccopycat |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
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| Classification number |
621.38152 |
| Edition number |
23 |
| Item number |
FEN |
| 100 ## - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Feng, Zhe Chuan |
| 245 00 - TITLE STATEMENT |
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| Title |
III-nitride materials, devices and nano-structures / |
| Statement of responsibility, etc |
editor, Zhe Chuan Feng, Guangxi University, P.R. China. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
|---|
| Place of publication, distribution, etc |
London : Europe Ltd., |
| Name of publisher, distributor, etc |
World Scientific Publishing |
| Date of publication, distribution, etc |
2017 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
xviii, 405 pages : |
| Other physical details |
illustrations ; |
| Dimensions |
24 cm |
| 505 ## - FORMATTED CONTENTS NOTE |
|---|
| Title |
PART 1.General |
| -- |
PART 2.Waste energy harvesting using 3-nitride materials |
| -- |
PART 3.Nitride Materials |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc |
<br/>"Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more... |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nanostructured materials. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nitrides. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nanostructured materials. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nitrides. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Feng, Zhe Chuan, |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
Dewey Decimal Classification |
| Koha item type |
General Books |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc |
Includes bibliographical references and index. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| General subdivision |
Materials. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Source of heading or term |
fast |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Source of heading or term |
fast |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| General subdivision |
Materials. |
| Source of heading or term |
fast |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Relator term |
editor. |
| 906 ## - LOCAL DATA ELEMENT F, LDF (RLIN) |
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| a |
7 |
| b |
cbc |
| c |
copycat |
| d |
2 |
| e |
ncip |
| f |
20 |
| g |
y-gencatlg |
