Low Power and Reliable SRAM Memory Cell and Array Design [electronic resource] edited by Koichiro Ishibashi and Kenichi Osada
Material type:
TextSeries: Springer Series in Advanced Microelectronics SerPublication details: New York : Springer Aug. 2011Description: xi, 143 p, 23 cmISBN: - 9783642195679
- 3642195679 (Trade Cloth)
- 621.39732 23
- TK7871.99.M44
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CUTN Central Library Medicine, Technology & Management | 621.39732 (Browse shelf(Opens below)) | 1 | Available | 10970 |
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| 621.39/5 Digital principles and applications / | 621.39/5 Digital principles and applications / | 621.395 MCL Logic Design / | 621.39732 Low Power and Reliable SRAM Memory Cell and Array Design | 621.398 SUA Data Acquisition Handbook | 621.402 Thermal Sciences : | 621.402 Thermal Sciences : |
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Annotation The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Scholarly & Professional Springer
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