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Low Power and Reliable SRAM Memory Cell and Array Design [electronic resource] edited by Koichiro Ishibashi and Kenichi Osada

Contributor(s): Material type: TextSeries: Springer Series in Advanced Microelectronics SerPublication details: New York : Springer Aug. 2011Description: xi, 143 p, 23 cmISBN:
  • 9783642195679
  • 3642195679 (Trade Cloth)
DDC classification:
  • 621.39732 23
LOC classification:
  • TK7871.99.M44
Online resources: SpringerLink ebooks - Engineering (2011)Annotation The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
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General Books CUTN Central Library Medicine, Technology & Management 621.39732 (Browse shelf(Opens below)) 1 Available 10970

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Annotation The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.

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