III-nitride materials, devices and nano-structures / editor, Zhe Chuan Feng, Guangxi University, P.R. China.
Material type: TextLanguage: English Publication details: London : Europe Ltd., World Scientific Publishing 2017Description: xviii, 405 pages : illustrations ; 24 cmISBN:- 9781786343185
- 1786343185
- 621.38152 23 FEN
Item type | Current library | Collection | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|---|
Reference Books | CUTN Central Library Reference | Reference | 621.38152 FEN (Browse shelf(Opens below)) | Not For Loan | 37470 |
Browsing CUTN Central Library shelves, Shelving location: Reference, Collection: Reference Close shelf browser (Hides shelf browser)
621.312429 OHA Fuel cell fundamentals / | 621.315 ZHO Electrolytes for electrochemical supercapacitors / | 621.381 Handbook of Electronics | 621.38152 FEN III-nitride materials, devices and nano-structures / | 621.382 BHA V1 Handbook of signal processing systems / | 621.384 MAX The IBOC handbook : understanding HD radio technology / | 621.389 RUM Digital interface handbook / |
PART 1.General PART 2.Waste energy harvesting using 3-nitride materials PART 3.Nitride Materials
"Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more...
Includes bibliographical references and index.
There are no comments on this title.