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III-nitride materials, devices and nano-structures / editor, Zhe Chuan Feng, Guangxi University, P.R. China.

By: Feng, Zhe Chuan.
Contributor(s): Feng, Zhe Chuan | [editor.].
Material type: materialTypeLabelBookPublisher: London : Europe Ltd., World Scientific Publishing 2017Description: xviii, 405 pages : illustrations ; 24 cm.ISBN: 9781786343185; 1786343185.Subject(s): Semiconductors | Nanostructured materials | Nitrides | Nanostructured materials | Nitrides | Semiconductors | -- Materials | | | -- MaterialsDDC classification: 621.38152
Contents:
PART 1.General PART 2.Waste energy harvesting using 3-nitride materials PART 3.Nitride Materials
Summary: "Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more...
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Reference
Reference 621.38152 FEN (Browse shelf) Not For Loan 37470

PART 1.General PART 2.Waste energy harvesting using 3-nitride materials PART 3.Nitride Materials


"Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more...

Includes bibliographical references and index.

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