III-nitride materials, devices and nano-structures / editor, Zhe Chuan Feng, Guangxi University, P.R. China.
Material type: TextLanguage: English Publication details: London : Europe Ltd., World Scientific Publishing 2017Description: xviii, 405 pages : illustrations ; 24 cmISBN:- 9781786343185
- 1786343185
- 621.38152 23 FEN
Item type | Current library | Collection | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|---|
Reference Books | CUTN Central Library Reference | Reference | 621.38152 FEN (Browse shelf(Opens below)) | Not For Loan | 37470 |
PART 1.General PART 2.Waste energy harvesting using 3-nitride materials PART 3.Nitride Materials
"Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) Read more...
Includes bibliographical references and index.
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